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| HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE(sat) tfi(typ) Preliminary data = 600 V = 24 A = 2.1 V = 120 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 W Clamped inductive load, L = 300 mH TC = 25C Maximum Ratings 600 600 20 30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features * Moderate frequency IGBT * New generation HDMOSTM process * International standard package JEDEC TO-247 * High peak current handling capability and antiparallel diode in one package Applications * * * * PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.0 200 1.5 100 2.1 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VGE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98600B (7/00) (c) 2000 IXYS All rights reserved 1-2 IXGH 12N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 10 10 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 * VCES, RG = Roff = 18 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 * VCES, RG = Roff = 18 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG IGBT 0.25 20 20 150 120 0.5 20 20 0.5 200 200 0.8 250 270 0.8 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 1.25 K/W K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXGH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 1.5 2.49 Reverse Diode (FRED) Symbol VF Test Conditions I F = 15A; T VJ = 150C T VJ = 25C Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.3 2.5 2 2.5 V V A IRM t rr RthJC V R = 100 V; I F =25A; -di F /dt = 100 A/ms L < 0.05 mH; T VJ = 100C IF = 1 A; -di/dt = 50 A/ms; VR = 30 V TJ = 25C Diode 35 ns 1.6 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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